Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• from the top reached the Si p–n junction and generated electron–hole pairs, building a potential difference across the junction. The generated photovoltage was applied to the piezoelectric capacitor through the photolithographically defined contacts and induced mechanical displacement in the

Recent trends in Bi-based nanomaterials: challenges, fabrication, enhancement techniques, and environmental applications

• Vishal Dutta,
• Ankush Chauhan,
• Ritesh Verma,
• C. Gopalkrishnan and
• Van-Huy Nguyen

Beilstein J. Nanotechnol. 2022, 13, 1316–1336, doi:10.3762/bjnano.13.109

• levels of Bi2O3 and Bi2S3 equilibrate at the p–n junction, was also proposed. Bi2S3, which has a smaller bandgap than Bi2O3, is excited when it is exposed to visible light, while Bi2O3 is not. The photogenerated holes stay in the p-type Bi2S3 VB, while the excitons in the p-type Bi2S3 CB migrate to the n

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• their sizes [92]. Generally, a QD-based EML is sandwiched between a polymer-based ETL and HTL. Carbon-based nanomaterials such as SWNT have also been investigated as EML in OLED. Firstly, a SWNT p–n junction on a Si substrate has been investigated by Lee et al. [93]. Further, Mueller et al., with some

Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• charges (possibly, a p–n junction is formed). It was shown [59] that electrons that were transferred from the n-type semiconductor and stored in the rGO sheets are withdrawn upon exposure to gas, thereby restoring the hole concentration and p-type conductivity of rGO. This is made possible by the energy

Towards 3D self-assembled rolled multiwall carbon nanotube structures by spontaneous peel off

• Jonathan Quinson

Beilstein J. Nanotechnol. 2020, 11, 1865–1872, doi:10.3762/bjnano.11.168

• in CNTs is achieved by tuning experimental parameters during CNT synthesis [16]. To date, CNTs with so-called intratubular junctions have been used exclusively for electronic applications due to their p–n junction behavior [17][18][19]. The potential of CNTs with junctions to serve as building blocks

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• –voltage characteristic does not fit the classical formula for a p–n junction, which should be a straight line for the forward bias in the semi-logarithmic coordinates. On the contrary, the characteristics are fit to straight lines in the double logarithmic coordinates (Figure 9c and Figure 10c). Moreover

• , the investigated heterojunctions work as photodetectors at forward bias, while a classical p–n junction should function as a photodetector at reverse bias. Since the current–voltage characteristics are fit to straight lines in the log–log coordinates, it means that they correspond to a power function

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward

• including two concepts: the influence of prestress loading on p–n junctions in a quasi-electrostatic thermal equilibrium and the perturbation of small fields superposed on the obtained quasi-electrostatic solutions. A few useful results are obtained through this loaded p–n junction model. Under a forward

• -bias voltage, a tensile (compressive) loading raises (reduces) the potential barrier of the space charge zone (SCZ), i.e., produces an equivalent reverse- (forward-) electric voltage on the SCZ. When a piezoelectric p–n junction is exposed to a reverse-bias voltage, the current density monotonically

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• [19]. Single NW photodetectors based on the photoconductive operation principle [20] or p–n junction photodiodes [21] have demonstrated high sensitivity. For these reasons, single NW components are considered as promising building blocks for integration with SiN photonic platforms. For the wafer-scale

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• metal oxides together having a mismatched crystal (lattice) size, resulting in enhanced gas diffusion (penetration) and subsequently fast response/recovery time. Furthermore, a hybrid structure (i.e. p–n junction, n–n junction or p–p junction) facilitates low operating temperature gas sensing with high

Cr(VI) remediation from aqueous environment through modified-TiO₂-mediated photocatalytic reduction

• Rashmi Acharya,
• Brundabana Naik and
• Kulamani Parida

Beilstein J. Nanotechnol. 2018, 9, 1448–1470, doi:10.3762/bjnano.9.137

• to the red end of the solar spectrum [162][163][164]. The p–n junction is formed by coupling a p-type (hole-rich) semiconductor with n-type (electron-rich) TiO2. As a result, the photoelectrons are diffused to the p-type semiconductor and holes are diffused to n-type TiO2 to create an inner electric

• water [165]. Upon increasing the content of Cu2O in TiO2/Cu2O nanocomposites, photoreduction increased and reached a maximum for 30% Cu2O. This is because 30% Cu2O might be an appropriate amount for the formation of a p–n junction between TiO2 and Cu2O nanoparticles, which could efficiently separate

• photocatalyst [173]. An increase in the surface area of NiO/TiO2 will lead to an increase of active sites, which enhances the photocatalytic activity. Ku et al. reported that coupling of p-type NiO with n-type TiO2 resulted in the development of an NiO/TiO2 photocatalyst with the formation of a p–n junction

Facile synthesis of a ZnO–BiOI p–n nano-heterojunction with excellent visible-light photocatalytic activity

• Mengyuan Zhang,
• Jiaqian Qin,
• Pengfei Yu,
• Bing Zhang,
• Mingzhen Ma,
• Xinyu Zhang and
• Riping Liu

Beilstein J. Nanotechnol. 2018, 9, 789–800, doi:10.3762/bjnano.9.72

• heterojunctions could promote increased photocatalytic activity efficiency. Once the p–n junction has been formed, the inner electric field between the inner surface of two semiconductors will promote the separation efficiency of photoinduced electron–hole pairs [30][31]. Consequently, coupling an n-type metal

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• ]. The fabrication of a simple SC based on GaN NWs on Si(111) can be obtained via proper NW doping and formation of a p–n junction at Si substrate–GaN NW interface. Recently it has been theoretically demonstrated that optimization of the doping level and NW array morphology can lead to a power conversion

Ammonia gas sensors based on In₂O₃/PANI hetero-nanofibers operating at room temperature

• Qingxin Nie,
• Zengyuan Pang,
• Hangyi Lu,
• Yibing Cai and
• Qufu Wei

Beilstein J. Nanotechnol. 2016, 7, 1312–1321, doi:10.3762/bjnano.7.122

• characteristics of all In2O3/PANI nanofibers clearly exhibit a nonlinear behavior and it can be observed the rectifying behavior in Figure 4, which might result from the p–n junction between the p-type PANI and n-type In2O3 [28][29]. It can be observed that the current of In2O3/PANI showed exponential rise at low

• form a typical ohmic system [31]. Thus, it can be confirmed that a p–n junction between PANI and In2O3 had been formed. Gas sensing properties To study the ammonia sensing behavior of the sensors with different ratios of In2O3 to aniline, the dynamic response of the sensors based on pure PANI and In2O3

• section [40]. Simultaneously, the variation of the PANI region width would have effects on the width of the In2O3 region and on the p–n junction. The electrons of In2O3 and holes of PANI move in opposite directions until the new Fermi level (EF-NH3) reaches equilibrium. In this process, the electron

Photocurrent generation in carbon nanotube/cubic-phase HfO₂ nanoparticle hybrid nanocomposites

• Protima Rauwel,
• Augustinas Galeckas,
• Martin Salumaa,
• Frédérique Ducroquet and
• Erwan Rauwel

Beilstein J. Nanotechnol. 2016, 7, 1075–1085, doi:10.3762/bjnano.7.101

• generally weak with respect to the dark current in the absence of additional Schottky or p–n junction to enhance the photoresponse [63]. This agrees well with the PL measurements of the nanocomposites (see Figure 2) showing no additional spectral features apart from emission peaks associated with Hf3+ and

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination. Keywords: copper alloy; electrostatic force microscopy; high-voltage device; Kelvin probe force microscopy; silicon carbide (SiC); surface photo

• the generated electron–hole pairs are reducing the surface band bending depending on the illumination intensity and energy even until flat-band conditions. To demonstrate the impact of SPV, we illuminated the SiC p/n-junction with laser light of 470–480 nm and a power of maximum 50 mW. An increase of

• features can be observed in the line sections shown in Figure 7a. At the p/n-junction a dip in the CPD can be observed which vanishes under illumination. This might indicated that the interface states are already fully charged before illumination inducing a dip in the surface potential. Furthermore, the

Current–voltage characteristics of manganite–titanite perovskite junctions

• Benedikt Ifland,
• Patrick Peretzki,
• Birte Kressdorf,
• Philipp Saring,
• Andreas Kelling,
• Michael Seibt and
• Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

• , e.g., [51]). As a consequence, it is necessary to directly determine the diffusion length in a PCMO–STNO p–n junction. An established technique to measure the charge carrier diffusion length in devices with p–n junctions is by mapping the electron beam-induced current (EBIC) across the sample without

Graphene quantum interference photodetector

• Mahbub Alam and
• Paul L. Voss

Beilstein J. Nanotechnol. 2015, 6, 726–735, doi:10.3762/bjnano.6.74

• electrons and holes. Photocurrent generation without a p–n junction and bias has also been demonstrated by utilizing the built-in electric field at the metal–graphene interface [20]. In this paper, we present the simulation results of two different approaches for an all-graphene (leads and device

• , we analyze the total current switching caused by the phase decoherence of electrons by placing a strong photon flux in one or both of the interferometer arms. This structure has the advantages that it does not require a p–n junction, it can operate at subwavelength resolution, its dimensions are very

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• structures (e.g., heavily doped p–n junction, double and triple barrier, quantum well, quantum wires and quantum dots, nanotubes and graphene) [1][2][3][4][5][6][7]. In general, it has been associated with the occurrence of a process at the junction that allows the electrons to tunnel between energy levels

• in the tunneling effect between a highly doped p–n junction; however, in our case, the physics behind this process is completely different. However, several questions are still open regarding the interpretation of the experimental data, for which we cannot exclude the presence of different mechanisms

Simple approach for the fabrication of PEDOT-coated Si nanowires

• Mingxuan Zhu,
• Marielle Eyraud,
• Judikael Le Rouzo,
• Nadia Ait Ahmed,
• Florence Boulc’h,
• Claude Alfonso,
• Philippe Knauth and
• François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

• visible spectrum can be achieved for SiNWs [8]. As far as the device fabrication is concerned, a core–shell arrangement of p–n junction forming materials is promising for the optimization of the electronic charge collection capability. This is due to the nature of the core–shell structure, which allows

• the transport path along the radial direction of photogenerated carriers to be greatly shortened without sacrificing light absorption [9]. However, the high aspect ratio of SiNWs makes it difficult to realize a radial p–n junction, where each individual Si wire in the array would need to be

• individually coated. Various fabrication efforts have been attempted to achieve a true core–shell p–n junction. For example, chemical vapor deposition (CVD) [10][11] and atomic layer deposition (ALD) [12] are methods that can be employed to obtain this type of nanostructured junction, however, they suffer from

An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH₃ gas sensor applications

• Elnaz Akbari,
• Vijay K. Arora,
• Aria Enzevaee,
• Mohamad. T. Ahmadi,
• Mehdi Saeidmanesh,
• Mohsen Khaledian,
• Hediyeh Karimi and
• Rubiyah Yusof

Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85

• the bonding characteristics between these molecules and the CNT [33][34]. It is always important to obtain p-type and/or n-type semiconducting CNT to incorporate them in a complementary logic. A p–n junction is a result of this complementarity. n-Type and p-type nanoscale field effect transistors can

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• substrates in 2013. The best efficiencies were obtained by using cadmium sulfide (CdS) as buffer layer in solar cells with a glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al stack. The buffer layer is an n-type semiconductor that forms the p–n junction with the p-type CIGS absorber, and also modifies the CIGS surface

Near-field effects and energy transfer in hybrid metal-oxide nanostructures

• Ulrich Herr,
• Balati Kuerbanjiang,
• Cahit Benel,
• Giorgos Papageorgiou,
• Manuel Goncalves,
• Johannes Boneberg,
• Paul Leiderer,
• Paul Ziemann,
• Peter Marek and
• Horst Hahn

Beilstein J. Nanotechnol. 2013, 4, 306–317, doi:10.3762/bjnano.4.34

• , which depend on a p-n junction for separating electrons and holes generated by photon absorption, these cells are based on the very different mobility of electrons and holes. The electrons are injected into the conduction band of nanostructured TiO2, where the nanostructure provides a sufficient contact